Silicon oxynitridation with inductively coupled oxygen-nitrogen mixed plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 612-616

  Ito, Tetsuya ^a   Kitayama, Daisuke ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

C V characteristics; Fowler Nordheim tunneling current; Inductively coupled; Nitride; Oxynitride; Plasma oxynitridation; Silicon; XPS

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTICS; FOWLER-NORDHEIM TUNNELING CURRENTS; PLASMA OXYNITRIDATION; SILICON OXYNITRIDES;

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDES; OXIDES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON NITRIDE;

EID: 0031073517     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.612     Document Type: Article

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