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Volumn 351, Issue 1-3, 1996, Pages 111-128

An ion scattering study of the interaction of oxygen with Si(111): Surface roughening and oxide growth

Author keywords

Etching; Low index single crystal surfaces; Medium energy ion scattering (MEIS); Metal oxide semiconductor (MOS) structures; Oxidation; Silicon; Silicon oxides; Surface structure, morphology, roughness, and topography

Indexed keywords

ETCHING; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; MOS DEVICES; OXIDATION; OXIDES; OXYGEN; PRESSURE EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON COMPOUNDS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

EID: 0030143738     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01351-2     Document Type: Article
Times cited : (26)

References (84)
  • 42
    • 0040435699 scopus 로고
    • Eds. I. Ohdomari, M. Oshima and A. Hiraki Elsevier, Amsterdam
    • H. Kageshima and M. Tabe, in: Control of Semiconductor Interfaces, Eds. I. Ohdomari, M. Oshima and A. Hiraki (Elsevier, Amsterdam, 1994) p. 227.
    • (1994) Control of Semiconductor Interfaces , pp. 227
    • Kageshima, H.1    Tabe, M.2
  • 72
    • 0003205343 scopus 로고
    • Hydrogen stopping powers and ranges in all elements
    • Ed. J.F. Ziegler Pergamon, New York
    • H.H. Andersen and J.F. Ziegler, Hydrogen Stopping Powers and Ranges in All Elements, in: The Stopping and Ranges of Ions in Matter, Ed. J.F. Ziegler (Pergamon, New York, 1977).
    • (1977) The Stopping and Ranges of Ions in Matter
    • Andersen, H.H.1    Ziegler, J.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.