Fabrication and electrical characteristics of metal-ferroelectric- semiconductor field effect transistor based on poly(vinylidene fluoride)

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8472-8475

  Kim, Jeong Hwan ^a   Park, Byung Eun ^a   Ishiwara, Hiroshi ^b  

^a University of Seoul   (South Korea)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FRAM; Memory window; MFSFET; PVDF; Spin coating

Indexed keywords

DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; DIFFUSION COATINGS; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SPIN DYNAMICS; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; WINDOWS;

FRAM; MEMORY WINDOW; MFSFET; PVDF; SPIN-COATING;

FERROELECTRIC MATERIALS;

EID: 58749090383     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8472     Document Type: Article

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