Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

Nanotechnology

Volumn 20, Issue 47, 2009, Pages

  Fu, W Y ^a   Xu, Z ^a   Liu, L ^a   Bai, X D ^a   Wang, E G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC FIELD EFFECT TRANSISTORS; HIGH CARRIER MOBILITY; INTEGRATION DENSITY; LOW DRIVING VOLTAGE; MEMORY OPERATIONS; MEMORY SWITCHING; NANOTUBE TRANSISTORS; NON-VOLATILE; NONDESTRUCTIVE READ-OUT; REMNANT POLARIZATIONS; TOP GATE; ULTRA-LOW POWER CONSUMPTION;

CARBON NANOTUBES; CARRIER MOBILITY; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; NANOTUBE;

ARTICLE; ELECTRIC FIELD; ELECTRIC POTENTIAL; FILM; MATERIAL COATING; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 70449864453     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/47/475305     Document Type: Article

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