Proposed model for bistability in nanowire nonvolatile memory

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Pokalyakin, V ^a   Tereshin, S ^a   Varfolomeev, A ^b   Zaretsky, D ^b   Baranov, A ^c   Banerjee, A ^d   Wang, Y ^d   Ramanathan, S ^d   Bandyopadhyay, S ^d  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b KURCHATOV INSTITUTE   (Russian Federation)

^c MOSCOW AVIATION INSTITUTE NATIONAL RESEARCH UNIVERSITY   (Russian Federation)

^d Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC-ALUMINA MATRIX; CONDUCTANCE BISTABILITY; NANOWIRES; PACKING DENSITY;

ALUMINA; CADMIUM COMPOUNDS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; MATHEMATICAL MODELS; MOSFET DEVICES; NONVOLATILE STORAGE; SEMICONDUCTOR QUANTUM DOTS; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

EID: 21644473278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1937477     Document Type: Article

References (8)

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