Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 37, Issue 1-2, 2007, Pages 274-278

  Seo, B I ^a   Shaislamov, U A ^a   Kim, S W ^a   Kim, H K ^a   Yang, B ^a   Hong, S K ^b  

^a Kumoh National Institute of Technology   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Anodization; BLT; Ferroelectric; Nanotube; Porous alumina

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTALLIZATION; FERROELECTRIC DEVICES; NANOTUBES; SCANNING ELECTRON MICROSCOPY; WETTING;

ANODIZATION; BLT NANOTUBES; POLYMERIC SOURCES; POROUS ALUMINA;

CAPACITORS;

EID: 33947156700     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.09.003     Document Type: Article

References (12)

1. Yang B., Lee S.S., Kang Y.M., Noh K.H., Lee S.W., Kim N.K., Kweon S.Y., Yeom S.J., and Park Y.J. J. Appl. Phys. 42 (2003) 1327
2. Yang W.S., Kim N.K., Yeom S.J., Kweon S.Y., Choi E.S., and Roh J.S. J. Appl. Phys. 40 (2001) 5569
3. Bao D., Chiu T.W., Wakia N., Shinozaki K., and Mizutani N. J. Appl. Phys. 93 (2003) 997
4. Steinhart M., Zhihong J., Andreas K.S., Ralf B.W., Gosele U., and W Joachim H. Adv. Mater. 15 (2003) 706
5. Steinhart M., Wendorff J.H., and Wehrspohn R.B. Chem. Phys. Chem. 4 (2003) 1171
6. Jessensky O., Müller F., and Gosele U. Appl. Phys. Let. 72 (1998) 1173
7. Asoh H., Nishio K., Nakao M., Tamamura T., and Masuda H. J. Electrochem. Soc. 148 (2001) 152
8. Choi J., Luo Y., Wehrspohn R.B., Hillebrand R., and Schilling J. J. Appl. Phys. 94 (2003) 4757
9. Li A.P., Muller F., Birner A., Nielsch K., and Gosele U. J. Appl. Phys. 84 (1998) 6023
10. Seo B.I., Park N.J., Kim S.J., Oh Y.H., and Yang B. J. Kor. Phys. Soc. 45 (2004) 1313
11. Luo Y., Lee S.K., Hofmeister H., Steinhart M., and Gosele U. Nano Lett. 4 (2004) 143
12. Luo Y., Szafraniak I., Zakharov N.D., Nagarajan V., Steinhart M., Wehrspohn R.B., Wendorff J.H., Ramesh R., and Alexe M. Appl. Phys. Lett. 83 (2003) 440