Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

Physical Review Letters

Volumn 100, Issue 20, 2008, Pages

  Wang, Xinran ^a   Ouyang, Yijian ^b   Li, Xiaolin ^a   Wang, Hailiang ^a   Guo, Jing ^b   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CARRIER MOBILITY; CURRENT DENSITY; ELECTRON SCATTERING; NANOSTRUCTURED MATERIALS;

ALL-SEMICONDUCTING DEVICES; GRAPHENE; NANORIBBON FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 44149119344     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.206803     Document Type: Article

References (24)

1. A.K. Geim and K.S. Novoselov, Nat. Mater. 6, 183 (2007). NMAACR 1476-1122 10.1038/nmat1849
2. K.S. Novoselov, Science 306, 666 (2004). SCIEAS 0036-8075 10.1126/science.1102896
3. Y. Zhang, Y.-W. Tan, H.L. Stormer, and P. Kim, Nature (London) 438, 201 (2005). NATUAS 0028-0836 10.1038/nature04235
4. K.S. Novoselov, Nature (London) 438, 197 (2005). NATUAS 0028-0836 10.1038/nature04233
5. C. Berger, Science 312, 1191 (2006). SCIEAS 0036-8075 10.1126/science.1125925
6. K. Nakada, M. Fujita, G. Dresselhaus, and M.S. Dresselhaus, Phys. Rev. B PRBMDO 0163-1829 54, 17954 (1996). 10.1103/PhysRevB.54.17954
7. K. Wakabayashi, Phys. Rev. B PRBMDO 0163-1829 64, 125428 (2001). 10.1103/PhysRevB.64.125428
8. Y.-W. Son, M.L. Cohen, and S.G. Louie, Phys. Rev. Lett. 97, 216803 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.216803
9. L. Yang, Phys. Rev. Lett. 99, 186801 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.186801
10. V. Barone, O. Hod, and G.E. Scuseria, Nano Lett. NALEFD 1530-6984 6, 2748 (2006). 10.1021/nl0617033
11. M.Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98, 206805 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.206805
12. Y.-M. Lin and P. Arouris, Nano Lett. NALEFD 1530-6984 (to be published).
13. X. Li, Science 319, 1229 (2008). SCIEAS 0036-8075 10.1126/science.1150878
14. See EPAPS Document No. E-PRLTAO-100-074821 for supplementary material. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.
15. J. Moser, A. Barreiro, and A. Bachtold, Appl. Phys. Lett. 91, 163513 (2007). APPLAB 0003-6951 10.1063/1.2789673
16. D. Gunlycke, H.M. Lawler, and C.T. White, Phys. Rev. B PRBMDO 0163-1829 75, 085418 (2007). 10.1103/PhysRevB.75.085418
17. M.S. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, New York, NY, 2006).
18. A. Javey, Nano Lett. NALEFD 1530-6984 4, 1319 (2004). 10.1021/nl049222b
19. Z. Chen, Physica (Amsterdam) 40E, 228 (2007). PELNFM 1386-9477 10.1016/j.physe.2007.06.020
20. W. Kim, Appl. Phys. Lett. 87, 173101 (2005). APPLAB 0003-6951 10.1063/1.2108127
21. A. Javey, Nano Lett. NALEFD 1530-6984 5, 345 (2005). 10.1021/nl047931j
22. G. Pennington and N. Goldsman, Phys. Rev. B PRBMDO 0163-1829 71, 205318 (2005). 10.1103/PhysRevB.71.205318
23. B.C. Pan, W.S. Yang, and Jinlong Yang, Phys. Rev. B PRBMDO 0163-1829 62, 12652 (2000). 10.1103/PhysRevB.62.12652
24. B. Ozyilmaz, P. Jarillo-Herrero, D. Efetov, and P. Kim, Appl. Phys. Lett. 91, 192107 (2007). APPLAB 0003-6951 10.1063/1.2803074