Optimization of Pt and PZT films for ferroelectric-gate thin film transistors

Ferroelectrics

Volumn 405, Issue 1, 2010, Pages 281-291

  Tue, Phan Trong ^a   Miyasako, Takaaki ^b   Nguyen, Bui ^b   Trinh, Quoc ^b   Li, Jinwang ^b   Tokumitsu, Eisuke ^b,c   Shimoda, Tatsuya ^a,b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric gate field effect transistors; Pt; PZT thin films

Indexed keywords

ANNEALING PROCESS; BOTTOM ELECTRODES; CURRENT RATIOS; FERROELECTRIC-GATE THIN FILM TRANSISTORS; GATE FIELD; INDIUM TIN OXIDE; MEMORY WINDOW; POLYCRYSTALLINE; PT; PT FILMS; PZT FILM; PZT THIN FILM; SI SUBSTRATES; SMALL GRAIN SIZE; SOL-GEL METHODS; SPUTTERING SYSTEMS;

FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; INDIUM; OPTIMIZATION; OXIDE FILMS; PLATINUM; SILICON COMPOUNDS; SOL-GEL PROCESS; THIN FILM TRANSISTORS; THIN FILMS; TIN;

FILM PREPARATION;

EID: 79955688401     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2010.483398     Document Type: Conference Paper

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