Deposition of 60 nm thin Sr0.8Bi2.2Ta 2O9 layers for application in scaled 1T1C and 1T FeRAM devices

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 162-165

  Goux, L ^a   Xu, Z ^a,b   Kaczer, B ^a   Groeseneken, G ^a,b   Wouters, D J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

1T; 1T1C; FeFET; FeRAM; Ferroelectric film; Microstructure; MOCVD; MOD; SBT

Indexed keywords

CORRELATION METHODS; CRYSTALLIZATION; DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERROELECTRIC THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; X RAY DIFFRACTION;

FEFET; FERAM; FERROELECTRIC FILMS; IT; ITIC; MOD; SBT;

STRONTIUM COMPOUNDS;

EID: 19944370507     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.061     Document Type: Conference Paper

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