Integration of (PbZr0.52 Ti0.48 O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Liao, Meiyong ^a   Imura, Masataka ^a   Fang, Xiaosheng ^a   Nakajima, Kiyomi ^a   Chen, Guangchao ^a   Koide, Yasuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; CAPACITANCE VOLTAGE CHARACTERISTIC; COERCIVE FIELD; ELECTRICAL PROPERTY; FERROELECTRIC POLARIZATION; GATE VOLTAGES; HYSTERESIS BEHAVIOR; IN-PLANE POLARIZATION; INDUCED VOLTAGES; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; PB(ZR0.52 , TI0.48)O3; PZT FILM; SCHOTTKY DIODES; SEED LAYER; SINGLE CRYSTAL DIAMOND;

BORON; CAPACITANCE; CAPACITORS; DIAMONDS; FERROELECTRICITY; LEAD; OZONE WATER TREATMENT; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS; SINGLE CRYSTALS;

DIAMOND FILMS;

EID: 67649211083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3156030     Document Type: Article

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