Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Kim, Seyoung ^a   Nah, Junghyo ^a   Jo, Insun ^b   Shahrjerdi, Davood ^a   Colombo, Luigi ^c   Yao, Zhen ^b   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GATE DIELECTRICS; GATES (TRANSISTOR); TRANSISTORS;

AL FILMS; ATOMIC LAYERS; CARRIER SCATTERINGS; DEVICE CHARACTERISTICS; DEVICE MODELS; EXPERIMENTAL DATUM; GRAPHENE; HIGH MOBILITIES; MOBILITY VALUES; NUCLEATION LAYERS; ROOM TEMPERATURES; TOP GATES;

FIELD EFFECT TRANSISTORS;

EID: 60349109113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077021     Document Type: Article

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