Characterization of gold nanoparticle pentacene memory device with polymer dielectric layer

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 6140-6143

  Kim, Hyung Jun ^a   Jung, Sung Mok ^a   Kim, Yo Han ^a   Kim, Bong Jin ^a   Ha, Sanghyub ^a   Kim, Yong Sang ^a   Yoon, Tae Sik ^a   Lee, Hyun Ho ^a  

^a Myong Ji University   (South Korea)

Author keywords

Capacitance voltage; Gold nanoparticle; Metal pentacene insulator semiconductor; Polyvinyl alcohol

Indexed keywords

CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CONTROL DEVICE; ELECTRICAL BEHAVIORS; FIELD EFFECTS; FUNCTIONALIZED; GATE INSULATOR; GOLD NANOPARTICLE; GOLD NANOPARTICLES; MEMORY DEVICE; MEMORY WINDOW; METAL-PENTACENE-INSULATOR- SEMICONDUCTOR; PENTACENES; POLYMER DIELECTRICS; SELF-ASSEMBLING; TRIETHOXYSILANE; VOLTAGE SWEEP;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; GOLD ALLOYS; MONOLAYERS; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; VANADIUM;

GOLD;

EID: 79958099221     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.112     Document Type: Article

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