Effects of Bi2Ti2O7 buffer layer on memory properties of BiFe0.95Mn0.05O3 thin film

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Yang, C H ^a   Hu, G D ^a   Wen, Z ^a   Yang, H L ^b  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHARGE INJECTION; DECOMPOSITION; LEAKAGE CURRENTS; MANGANESE; MANGANESE ALLOYS; MANGANESE COMPOUNDS; OPTICAL WAVEGUIDES; ORGANOMETALLICS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILMS; WINDOWS;

MEMORY PROPERTIES; MEMORY WINDOWS; METAL ORGANIC; SI(111) SUBSTRATES; VOLTAGE RAMPS;

DATA STORAGE EQUIPMENT;

EID: 55149117354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013564     Document Type: Article

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