Fabrication and characterization of a ferroelectric-gate FET with a ITO/PZT/SRO/Pt stacked structure

Proceedings of the International Conference on Microelectronics, ICM

Volumn , Issue , 2010, Pages 32-35

  Tue, Phan Trong ^a   Trinh, Bui Nguyen Quoc ^b   Miyasako, Takaaki ^b   Tokumitsu, Eisuke ^b,c   Shimoda, Tatsuya ^a,b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric gate thin film transistors (FGTs); ITO; Nonvolatile memory; Pb(Zr,Ti)O3; SrRuO3

Indexed keywords

FERROELECTRIC-GATE THIN FILM TRANSISTORS; ITO; NON-VOLATILE MEMORIES; PB(ZR , TI)O; SRRUO3;

CRYSTAL ORIENTATION; FIELD EFFECT TRANSISTORS; INDIUM; LEAD; MICROELECTRONICS; PEROVSKITE; PLATINUM; THIN FILM TRANSISTORS; THIN FILMS; TIN; ZIRCONIUM;

FERROELECTRICITY;

EID: 79951719223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2010.5696152     Document Type: Conference Paper

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