High-speed memory from carbon nanotube field-effect transistors with high-k gate dielectric

Nano Letters

Volumn 9, Issue 2, 2009, Pages 643-647

  Rinkiö, Marcus ^a   Johansson, Andreas ^a   Paraoanu, G S ^b   Törmä, Päivi ^b  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND GAPS; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CLOSE-IN; DEFECT STATE; FIGURE OF MERITS; FLASH-MEMORIES; GATE OXIDES; HAFNIUM OXIDES; HIGH-K GATE DIELECTRICS; HIGH-SPEED MEMORIES; MEMORY ELEMENTS; MEMORY SPEED; OPERATION SPEED; SINGLE-WALLED CARBONS; STATE-OF-THE ARTS;

CARBON NANOTUBES; DATA STORAGE EQUIPMENT; FLASH MEMORY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; MESFET DEVICES; NANOSENSORS; OXIDES; SINGLE-WALLED CARBON NANOTUBES (SWCN); SPEED; SURFACE CHEMISTRY;

FIELD EFFECT TRANSISTORS;

EID: 65249135863     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/n18029916     Document Type: Article

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