Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2405-2409

  Jiménez, David ^a   Miranda, Enrique ^a   Godoy, Andrés ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF GRANADA   (Spain)

Author keywords

Bipolar junction transistor (BJT); current gain; emitter width; emitter base distance; silicon carbide (SiC); simulations

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; CURRENT GAIN; EMITTER WIDTH; EMITTER-BASE DISTANCE; SIMULATIONS;

CAPACITANCE; DRAIN CURRENT; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; SILICON CARBIDE; SURFACE POTENTIAL; SURFACE PROPERTIES; TUNNEL DIODES;

BIPOLAR TRANSISTORS;

EID: 77956996030     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2062188     Document Type: Article

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