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Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 5208-5211

An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles

(6) Lee, W K a Aw, K C b Wong, H Y a Chan, K Y a Leung, M b Salim, N Tjitra b

a MULTIMEDIA UNIVERSITY (Malaysia)

b UNIVERSITY OF AUCKLAND (New Zealand)

Author keywords

Non volatile memory; Organic thin film transistor; ZnO nanoparticles

Indexed keywords

CAPACITANCE-VOLTAGE PLOTS; FABRICATION PROCESS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; NANO-COMPOSITE LAYERS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY TRANSISTORS; ORGANIC THIN FILM TRANSISTOR; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PROGRAM/ERASE; THRESHOLD VOLTAGE SHIFTS; TRAPPING CAPABILITY; ZINC OXIDE NANOPARTICLES; ZNO NANOPARTICLES;

CARRIER MOBILITY; CHARGE TRAPPING; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCOMPOSITE FILMS; NANOCOMPOSITES; NANOPARTICLES; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

TRANSISTORS;

EID: 79957657873 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.161 Document Type: Conference Paper

Times cited : (5)

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