Memory technology for the post CMOS era: The International Techonology Roadmap for Semiconductors Emerging Research Devices Technolog Working Group seeks out memory technologies with the potential to serve in 220nm and smaller integrated-circuit generations

IEEE Circuits and Devices Magazine

Volumn 21, Issue 2, 2005, Pages 13-20

  Brewer, Joe E ^a   Zhirnov, Victor V ^b   Hutchyby, James A ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b SEMICONDUCTOR RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRONS; LITHOGRAPHY; MIM DEVICES; MOSFET DEVICES; NANOTECHNOLOGY; POLYSILICON; RANDOM ACCESS STORAGE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE;

ELECTRON MEMORY; INSULATOR RESISTANCE CHANGE MEMORY; MEMORY TECHNOLOGY; MOLECULAR MEMORY; NANOFLOATING GATE MEMORY; POLYMER MEMORY; SINGLE ELECTRON TRANSISTOR;

CMOS INTEGRATED CIRCUITS;

EID: 18544383769     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2005.1414313     Document Type: Article

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