Buffer layer dependence of Ba3.15Nd0.85Ti 3O12 (BNdT) based MFIS capacitor for FeFET application

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 865-868

  Luo, Yafeng ^a   Xie, Dan ^a   Zang, Yongyuan ^a   Song, Rui ^a   Ren, Tianling ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE HYSTERESIS; ELECTRICAL PROPERTIES; FERROELECTRIC FIELD-EFFECT TRANSISTORS; FERROELECTRIC POLARIZATIONS; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; METAL FERROELECTRIC SEMICONDUCTORS; MFIS STRUCTURES; SI SUBSTRATES; SOL - GELS;

BARIUM; BUFFER LAYERS; CAPACITANCE; CAPACITORS; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; EPITAXIAL LAYERS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GELATION; HAFNIUM COMPOUNDS; HYSTERESIS; HYSTERESIS LOOPS; INTEGRATED CIRCUITS; NEODYMIUM; OPTICAL WAVEGUIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SILICON; SOL-GEL PROCESS; STRONTIUM ALLOYS; SUBSTRATES; THIN FILM DEVICES; WINDOWS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60649084451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734680     Document Type: Conference Paper

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