Single-ZnO-nanowire memory

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1735-1740

  Chiang, Yen De ^a   Chang, Wen Yuan ^b   Ho, Ching Yuan ^c   Chen, Cheng Ying ^a   Ho, Chih Hsiang ^d   Lin, Su Jien ^b   Wu, Tai Bor ^e   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d Purdue University   (United States)

^e NONE

Author keywords

Nanowire (NW); resistance random access memory (ReRAM); resistive switching; space charge limited (SCL) conduction; ZnO

Indexed keywords

HIGH-RESOLUTION TEM; MEMORY DEVICE; NON-VOLATILE; ON/OFF RATIO; RESISTANCE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; REWRITABLE; SELECTED AREA ELECTRON DIFFRACTION; SPACE-CHARGE-LIMITED (SCL) CONDUCTION; TEM; ZNO; ZNO NWS;

ELECTRON DIFFRACTION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SWITCHING; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 79957663921     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2121914     Document Type: Article

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