Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 369-371

  Sakai, Shigeki ^a   Ilangovan, Rajangam ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Endurance; Ferroelectrics; Field effect transistor (FET); Metal ferroelectric insulator semiconductor (MFIS); Nonvolatile memory; Retention

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRODES; FERROELECTRIC DEVICES; GATES (TRANSISTOR); LASER ABLATION; PLATINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

METAL FERROELECTRIC INSULATOR SEMICONDUCTOR MEMORY; NONVOLATILE MEMORY; RETENTION;

FIELD EFFECT TRANSISTORS;

EID: 2942737378     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.828992     Document Type: Letter

References (11)

1. Y. Tarui, T. Hirai, K. Teramoto, H. Koike, and K. Nagashima, "Application of the ferroelectric materials to ULSI memories," Appl. Surf. Sci., vol. 114, pp. 656-663, Apr. 1997.
2. 6-SiO N-Si structures," Appl. Phys. Lett., vol. 75, pp. 575-577, July 1999.
3. 2 <001>-Si <001> for ferroelectric-gate FET memory," Integr. Ferroelect., vol. 40, pp. 1533-1541, Sept. 2001.
4. 9-SiN-Si gate structure," IEEE Electron Device Lett., vol. 23, pp. 82-84, Feb. 2002.
5. T. Li, S. T. Hsu, B. Ulrich, L. Stecker, and D. Evans, "One transistor ferroelectric memory devices with improved retention characteristics," Jpn. J. Appl. Phys., vol. 41, pp. 6890-6894, Nov. 2002. Part 1.
6. S. Sakai, "Semiconducting and ferroelectric memory devices and the fabrication method thereof,". Japan Patent pending (filed), to be published.
7. C. Chang and J. Lien, "Corner-field induced leakage in thin oxide MOSFET's," in IEDM Tech. Dig., 1987, pp. 714-717.
8. T. Y. Chan, J. Chen, P. K. Ko, and C. Hu, "The impact of gate-induced drain leakage current on MOSFET scaling," in IEDM Tech. Dig., 1987, pp. 718-721.
9. 3 at fields from 2 to 450 kV/cm," J Appl. Phys., vol. 34, pp. 3255-3260, Nov. 1963.
10. Y. Ishibashi and Y. Takagi, "Note on ferroelectric domain switching," J. Phys. Soc. Jpn., vol. 31, pp. 506-510, Aug. 1971.
11. T.-P. Ma and J.-P. Han, "Why is nonvolatile ferroelectric memory field-effect transistor still elusive?" IEEE Electron Device Lett., vol. 23, pp. 386-388, July 2002.