Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor

Nano Letters

Volumn 9, Issue 3, 2009, Pages 921-925

  Fu, Wangyang ^a   Xu, Zhi ^a   Bai, Xuedong ^a   Gu, Changzhi ^a   Wang, Enge ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPS; DATA RETENTION TIME; ELECTRIC-FIELD ENHANCEMENTS; ENERGY PER BITS; EPITAXIAL FERROELECTRIC FILMS; FERROELECTRIC FIELD-EFFECT TRANSISTORS; MEMORY DEVICES; MEMORY FUNCTIONS; MEMORY WINDOWS; OPERATION VOLTAGES; REMNANT POLARIZATIONS; ULTRA-LOW POWER CONSUMPTION;

CARBON FILMS; DATA STORAGE EQUIPMENT; EPITAXIAL FILMS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 65249160758     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801656w     Document Type: Article

References (30)

1. Iijima. S. Nature 1991, 354, 56-58.
2. Tans, S.; Verschueren, A.; Dekker, C. Nature 1998, 393, 49-52.
3. Rueckes, T.; Kim, K.; Joselevich, E.; Tseng, G. Y.; Cheung, C. L.; Lieber, C. M. Science 2000, 289, 94-97.
4. Avouris, Ph. Acc. Chem. Res. 2002, 35, 1026-1034.
5. Appenzeller, J.; Knoch, J.; Derycke, V.; Martel, R.; Wind, S.; Avouris, Ph. Phys. Rev. Lett. 2002, 89, 126801.
6. Javery, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. J. Nature 2003, 424, 654-657.
7. Fuhrer, M. S.; Kim, B. M.; Durkop, T.; Brintlinger, T. Nano Lett. 2002, 2, 755-759.
8. Radosavljevic, M.; Freitag, M.; Thadani, K. V.; Johnson, A. T. Nano Lett. 2002, 2, 761-764.
9. Cui, J. B.; Sordan, R.; Burghard, M.; Kern, K. Appl. Phys. Lett. 2002, 81, 3260-3262.
10. Ganguly, U.; Kan, E. C.; Zhang, Y. Appl. Phys. Lett. 2005, 87, 043108.
11. Choi, W. B.; Chae, S.; Bae, E.; Lee, J. W. Appl. Phys. Lett. 2003, 82, 275-277.
12. Star, A.; Lu, Y.; Bradley, K.; Gruner, G. Nano Lett. 2004, 4, 1587-1591.
13. Guo, A.; et al. Nanotechnology 2007, 18, 125206.
14. Kim, W.; Javey, A.; Vermesh, O.; Wang, Q.; Li, Y.; Dai, H. Nano Lett. 2003, 3, 193-198.
15. Mathews, S.; Ramesh, R.; Venkatesan, T.; Benedetto, J. Science 1997, 276, 238-240.
16. Ma, T. P.; Han, J. P. IEEE Electron Device Lett. 2002, 23, 386-388.
17. Lue, H. T.; Wu, C. J.; Tseng, T. Y. IEEE Trans. Electron Devices 2002, 49, 1790-1798.
18. Sakai, S.; Ilangovan, R. IEEE Electron Device Lett. 2004, 25, 369-371.
19. Naber, R.; et al. Nat. Mater. 2005, 4, 243-248.
20. Arimoto, Y.; Ishiwara, H. MRS Bulletin 2004, 100, 823-828.
21. Kohlstedt, H.; et al. Microelectron. Eng. 2005, 80, 296-304.
22. Scott, J. F. Science 2007, 315, 954-959.
23. Lei, B.; Li, C.; Zhang, D.; Zhou, Q. F.; Shung, K. K.; Zhou, C. Appl. Phys. Lett. 2004, 84, 4553-4555.
24. Sakurai, T.; Yoshimura, T.; Akita, S.; Fujimura, N.; Nakayama, Y. Jpn. J. Appl. Phys. 2006, 45, 1036-1038.
25. Ohishi, M.; Shiraishi, M.; Ochi, K.; Kubozono, Y.; Kataura, H. Appl. Phys. Lett. 2006, 89, 203505.
26. Zhang, G. Y.; et al. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 16141-16145.
27. Lee, S. H.; Jung, Y.; Agarwal, R. Nat. Nanotechnol. 2007, 2, 626-630.
28. Wunnicke, O. Appl. Phys. Lett. 2006, 89, 083102.
29. Zhou, C.; Newns, D. M. J. Appl. Phys. 1997, 82, 3081-3088.
30. Stengel, M.; Spaldin, N. A. Nature 2006, 443, 679-682.