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Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

(7) Kim, Tae Wook a Gao, Yan a,b Acton, Orb a Yip, Hin Lap a Ma, Hong a Chen, Hongzheng b Jen, Alex K Y a,c

a University of Washington (United States)

b ZHEJIANG UNIVERSITY (China)

c UNIVERSITY OF WASHINGTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE BIAS; NON-VOLATILE MEMORY APPLICATION; ON/OFF RATIO; ORGANIC NONVOLATILE MEMORIES; OXIDE NANOSHEETS; REVERSIBLE SWITCHING; THRESHOLD VOLTAGE SHIFTS; TRANSFER CURVES;

CHARGE TRAPPING; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; NANOSHEETS; THRESHOLD VOLTAGE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77955152124 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3464292 Document Type: Article

Times cited : (96)

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