Hysteresis of electronic transport in graphene transistors

ACS Nano

Volumn 4, Issue 12, 2010, Pages 7221-7228

  Wang, Haomin ^a,b   Wu, Yihong ^a   Cong, Chunxiao ^b   Shang, Jingzhi ^b   Yu, Ting ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

capacitive gating; charge transfer; conductance hysteresis; graphene transistor; water dipole

Indexed keywords

CAPACITIVE GATING; CONDUCTANCE HYSTERESIS; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESPONSE; ELECTROLYTE GATE; ELECTRONIC TRANSPORT; ELECTROSTATIC DETECTION; FERROELECTRIC GATE; GATE VOLTAGES; GRAPHENE DEVICES; GRAPHENE TRANSISTOR; GRAPHENE TRANSISTORS; HELIUM ATMOSPHERE; HYSTERETIC PHENOMENA; ICE LAYERS; LOW TEMPERATURES; MOBILE IONS; NEGATIVE SHIFT; NON-VOLATILE MEMORIES; NUMBER OF LAYERS; POLARITY SWITCHES; POSITIVE SHIFT; SELF-HEATING; VOLTAGE-DEPENDENT CONDUCTANCE; WATER DIPOLE; WATER LAYERS;

CHARGE TRANSFER; FIELD EFFECT TRANSISTORS; HELIUM; HYSTERESIS; ION EXCHANGE; MASS TRANSFER; SILICON COMPOUNDS;

GRAPHENE;

EID: 78650740347     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101950n     Document Type: Article

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