DyScO3 buffer layer for a performing metal-ferroelectric- insulator-semiconductor structure with multiferroic BiFeO3 thin film

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Murari, N M ^a   Thomas, R ^a   Pavunny, S P ^a   Calzada, J R ^a   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGES; FERROELECTRIC LAYERS; FREQUENCY RANGES; MEMORY WINDOWS; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; MULTIFERROIC; POLY-CRYSTALLINE; RHOMBOHEDRAL STRUCTURES; SATURATION VALUES; VOLTAGE SWEEPS;

AMORPHOUS MATERIALS; BUFFER LAYERS; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; INSULATION;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 64349102356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116088     Document Type: Article

References (18)

1. J. F. Scott and C. A. Araujo, Science SCIEAS 0036-8075 10.1126/science.246.4936.1400 246, 1400 (1989).
2. L. Moll and Y. Tarui, IEEE Trans. Electron Devices ED-10, 333 (1963). 0018-9383
3. A. Gerber, H. Kohlstedt, M. Fitsilis, R. Waser, T. J. Reece, S. Ducharme, and E. Rije, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2218463 100, 024110 (2006).
4. B. -E. Park, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1814437 85, 4448 (2004).
5. X. Lu, H. Ishiwara, X. Gu, D. Lubyshev, J. Fastenau, and R. Pelzel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3065474 105, 024111 (2009).
6. J. Senzaki, K. Kurihara, N. Nomura, O. Mitsunaga, Y. Iwasaki, and T. Ueno, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.37.5150 37, 5150 (1998).
7. R. Thomas, R. E. Melgarejo, D. K. Pradhan, N. K. Karan, J. J. Saavedra-Arias, and R. S. Katiyar, ECS Trans. ECSTF8 1938-5862 10.1149/1.2908649 13, 363 (2008).
8. Y. -W. Chiang and J. -M. Wu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2794335 91, 142103 (2007).
9. C. -S. Yeh and J. -M. Wu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3001800 93, 154101 (2008).
10. T. P.-C. Juan, J. -H. Lu, and M. -W. Lu, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2994630 155, H991 (2008).
11. S. Y. Yang, Q. Zhan, P. L. Yang, M. P. Cruz, Y. H. Chu, R. Ramesh, Y. R. Wu, J. Singh, W. Tan, and D. G. Schlom, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2757089 91, 022909 (2007).
12. R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser, M. Wagner, J. Schubert, S. Van Elshocht, and M. Caymax, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2402121 89, 232902 (2006).
13. N. M. Murari, A. Kumar, R. Thomas, and R. S. Katiyar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2903495 92, 132904 (2008).
14. N. M. Murari, R. Thomas, A. Winterman, R. E. Melgarejo, S. P. Pavunny, and R. S. Katiyar, " Structural, electrical and magnetic properties of chemical solution deposited Bi(Fe0.95 Cr0.05) O3 thin films on platinized silicon substrates., J. Appl. Phys. (to be published).
15. P. C. Juan, Y. Hu, F. C. Chiu, and J. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2014935 98, 044103 (2005).
16. S. H. Lim, A. C. Rastogi, and S. B. Desu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1785836 96, 5673 (2004).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
18. J. G. Simmons, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.155.657 155, 657 (1967).