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Volumn 22, Issue 1-3, 2009, Pages 276-280
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Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer
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Author keywords
LaZrO x; MFIS; Sol gel; SrBi2Ta2O9
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Indexed keywords
AMORPHOUS MATERIALS;
BUFFER LAYERS;
DATA STORAGE EQUIPMENT;
FERROELECTRICITY;
GELATION;
GELS;
HYSTERESIS;
PHOTORESISTS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
SOL-GEL PROCESS;
SOL-GELS;
SOLS;
SURFACE ROUGHNESS;
TANTALUM;
WINDOWS;
AMORPHOUS PHASE;
ANNEALING TEMPERATURES;
C-V CHARACTERISTICS;
CLOCKWISE HYSTERESIS LOOPS;
CRYSTALLINE PHASE;
FERROELECTRIC PROPERTIES;
LAZRO X;
LEAKAGE CURRENT DENSITIES;
MEMORY WINDOWS;
METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES;
MFIS;
P-TYPE SI;
POLYCRYSTALLINE PHASE;
ROOT-MEAN-SQUARED;
SBT FILMS;
SI(1 0 0 );
SOL-GEL;
SOL-GEL TECHNIQUES;
SRBI2TA2O9;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 60649111369
PISSN: 13853449
EISSN: 15738663
Source Type: Journal
DOI: 10.1007/s10832-007-9366-1 Document Type: Article |
Times cited : (2)
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References (19)
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