Model and key fabrication technologies for FeRAM

ECS Transactions

Volumn 22, Issue 1, 2009, Pages 217-225

  Ren, Tian Ling ^a   Zhang, Ming Ming ^a   Jia, Ze ^a   Wang, Lin Kai ^a   Wei, Chao Gang ^a   Xue, Kan Hao ^a   Zhang, Ying Jie ^a   Hu, Hong ^a   Xie, Dan ^a   Liu, Li Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; FABRICATION; FERROELECTRIC DEVICES; FERROELECTRIC RAM; FERROELECTRICITY; HYSTERESIS; INTEGRATED CIRCUIT MANUFACTURE; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR DEVICE MANUFACTURE; SPICE; THIN FILM TRANSISTORS; THIN FILMS; TITANIUM COMPOUNDS; ULSI CIRCUITS; ZIRCONIUM COMPOUNDS;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ARC TANGENT FUNCTIONS; FABRICATION TECHNOLOGIES; FATIGUE PROPERTIES; FERROELECTRIC CAPACITORS; FERROELECTRIC RANDOM ACCESS MEMORY; LOW-POWER CONSUMPTION; NON-VOLATILE MEMORY;

THIN FILM CIRCUITS;

EID: 84863115376     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3152979     Document Type: Conference Paper

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