GaN substrates for III-nitride devices

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1324-1338

  Paskova, Tanya ^a   Hanser, Drew A ^a   Evans, Keith R ^a  

^a KYMA TECHNOLOGIES INC   (United States)

Author keywords

Ammonothermal growth; Doping; Gallium nitride (GaN); Heterostructure field effect transistor (HFET); Hydride vapor phase epitaxy; Laser diode (LD); Light emitting diode (LED); Native substrates; Point defects; Schottky diodes; Thermal conductivity

Indexed keywords

DEFECT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NITRIDES; POINT DEFECTS; POWER SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

AMMONOTHERMAL GROWTH; GALLIUM NITRIDES (GAN); HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HYDRIDE VAPOR PHASE EPITAXY; SCHOTTKY DIODES;

SUBSTRATES;

EID: 77953683401     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2030699     Document Type: Conference Paper

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