The effect of HVPE reactor geometry on GaN growth rate - Experiments versus simulations

Journal of Crystal Growth

Volumn 271, Issue 1-2, 2004, Pages 192-199

  Dam, C E C ^a   Grzegorczyk, A P ^a   Hageman, P R ^a   Dorsman, R ^b   Kleijn, C R ^b   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A1. Computer simulations; A3. Hydride vapour phase epitaxy; B1. GaN; B2. Semiconducting gallium compounds

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ENERGY GAP; GALLIUM NITRIDE; GAS DYNAMICS; HYDRIDES; PHASE SEPARATION; QUARTZ; REACTION KINETICS; THERMAL EFFECTS;

EPITAXIAL LAYERS; HIGH TEMPERATURE ELECTRONICS; HYDRIDE VAPOR PHASE EPITAXY; PHYSICAL REACTORS;

VAPOR PHASE EPITAXY;

EID: 4944259919     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.059     Document Type: Article

References (24)

1. A. Koukitu, Y. Kumagai, J. Phys.: Condens. Matter 13 (2001) 6907.
2. I. Grzegory, J.Phys.: Condens. Matter 13 (2001) 6875.
3. L. Liu, J.H. Edgar, Mater. Sci. Eng. R 37 (2002) 61.
4. S.T. Kim, Y.J. Lee, D.C. Moon, C.H. Hong, T.K. Yoo, J. Crystal Growth 194 (1998) 37.
5. E.A. Stach, M. Kelsch, E.C. Nelson, W.S. Wong, T. Sands, N.W. Cheung, Appl. Phys. Lett. 77 (2000) 1819.
6. W.S. Wong, T. Sands, N.W. Cheung, Appl. Phys. Lett. 72 (1998) 599.
7. W. Seifert, G. Fitzl, E. Butter, J. Crystal Growth 52 (1981) 257.
8. A. Koukitu, S. Hama, T. Taki, H. Seki, Jpn. J. Appl. Phys. 37 (1998) 762.
9. E. Aujol, J. Napierala, A. Trassoudaine, E. Gil-Lafon, R. Cadoret, J. Crystal Growth 222 (2001) 538.
10. R. Cadoret, A. Trassoudaine, J. Phys.: Condens. Matter 13 (2001) 6893.
11. M. Meyyapan, J. Vac. Sci. Technol. A 16 (1998) 685.
12. S.Y. Karpov, D.V. Zimina, Y.N. Makarov, B. Beaumont, G. Nataf, P. Gibart, M. Heuken, H. Jürgensen, A. Krishnan, Phys. Status Solidi A 176 (1999) 439.
13. G. Attolini, S. Carrà, F. Di Muzio, R. Fornari, M. Masi, C. Pelosi, Mater. Chem. Phys. 66 (2000) 213.
14. V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, M. Zielinski, P.K. Larsen, Appl. Phys. Lett. 79 (2001) 4109.
15. V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, W.H.M. Corbeek, P.K. Larsen, Phys. Status Solidi A 188 (2001) 473.
16. M. Boćkowski, I. Grzegory, S. Krukowski, B. Łucznik, Z. Romanowski, M. Wróblewski, J. Borysiuk, J. Weyher, P. Hageman, S. Porowski, J. Crystal Growth 246 (2002) 194.
17. P.R. Hageman, V. Kirilyuk, W.H.M. Corbeek, J.L. Weyher, B. Lucznik, M. Bockowski, S. Porowski, S. Müller, J. Crystal Growth 255 (2003) 241.
18. P.R. Hageman, J.J. Schermer, P.K. Larsen, Thin Solid Films 443 (2003) 9.
19. Fluent Inc., Fluent User's Guide, Lebanon, USA, 1998.
20. J.O. Hirschfelder, C.F. Curtis, R.B. Bird, Molecular Theory of Gases and Liquids, Wiley, New York, 1967.
21. C.R. Kleijn, Chemical vapor deposition processes, in: M. Meyyappan (Ed.), Computational Modeling in Semi-conductor Processing, Artech House, Boston, 1995, pp. 97-229 (Chapter 4).
22. R.J. Kee, G. Dixon-Lewis, J. Warnatz, M.E. Contrin, J.A. Miller, A Fortran computer code package for the evaluation of gas-phase multicomponent transport properties, Report SAND86-8246.UC-401, SANDIA Albuquerque, 1986.
23. M.J. Anders, M.M.G. Bongers, P.L. Bastos, L.J. Giling, J. Crystal Growth 154 (1995) 240.
24. C.C. Mitchell, M.E. Coltrin, J. Han, J. Crystal Growth 222 (2001) 144.