AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 429-433

  Storm, D F ^a   Katzer, D S ^a   Roussos, J A ^a   Mittereder, J A ^a   Bass, R ^a   Binari, S C ^a   Hanser, D ^b   Preble, E A ^b   Evans, K R ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

A3. Hydride vapor phase epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B3. High electron mobility transistors

Indexed keywords

HALL MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; VAPOR PHASE EPITAXY;

GALLIUM FLUX; HYDRIDE VAPOR PHASE EPITAXY; MICROWAVE CHARACTERIZATION; SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH;

EID: 33947355411     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.085     Document Type: Article

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