GaN substrates by HVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6910, Issue , 2008, Pages

  Weyers, Markus ^a   Richter, Eberhard ^a   Hennig, Ch ^a   Hagedorn, S ^a   Wernicke, T ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Ammonothermal; Boule growth; ELOG; GaN; GaN substrates; HVPE

Indexed keywords

AFFORDABLE PRICES; AMMONOTHERMAL; BULK GAN; GAN BASED LASER DIODES; GAN SUBSTRATES; HIGH PERFORMANCE; HIGH QUALITY (HQ); HYDRIDE VAPOUR PHASE EPITAXY; LIGHT-EMITTING DIODES; MASS PRODUCTION; MATERIAL QUALITY;

CRYSTAL GROWTH; DIODES; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUSTRIAL RESEARCH; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SUBSTRATES; WELL STIMULATION;

GALLIUM ALLOYS;

EID: 42149093094     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.764405     Document Type: Conference Paper

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