Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 415-419

  Paskova, T ^a   Birch, J ^a   Tungasmita, S ^a   Beccard, R ^b   Heuken, M ^b   Svedberg, E B ^a   Runesson, P ^a   Goldys, E M ^c   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AIXTRON AG   (Germany)

^c MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; FILM GROWTH; HYDRIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL MICROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTER DEPOSITION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0033221269     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U     Document Type: Article

References (10)

1. I. AKASAKI, H. AMANO, Y. KOIDE, K. HIRAMATSU, and N. SAWAKI, J. Cryst. Growth 98, 209 (1989).
2. J.N. KUZNIA, M.A. KHAN, D.T. OLSON, R. KAPLAN, and J. FREITAS, J. Appl. Phys. 73, 4700 (1993).
3. S. NAKAMURA, Jpn. J. Appl. Phys. 30, L1705 (1991).
4. E.J. TARSA, B. HEYING, X H. Wu, P. FINI, S.P. DENBAARS, and J.S. SPECK, J. Appl. Phys. 82, 5472 (1997).
5. R.J. MOLNAR, W. GÖTZ, L.T. ROMANO, and N.M. JOHNSON, J. Cryst. Growth 178, 147 (1997).
6. YU. MELNIK, A. NIKOLAEV, I. NIKITINA, K. VASSILEVSKI, and V. DMITRIEV, Mater. Res. Soc. Symp. Proc. 482, 269 (1998).
7. E.M. GOLDYS, T. PASKOVA, I.G. IVANOV, B. ARNAUDOV, and B. MONEMAR, Appl. Phys. Lett. 73, 3583 (1998).
8. T. PASKOVA, E.M. GOLDYS, and B. MONEMAR, J. Cryst. Growth 203, 1 (1999).
9. D. KAPOLNEK, X.H. WU, B. HEYING, S. KELLER, B.P. KELLER, U.K. MISHRA, S.P. DENBAARS, and J.S. SPECK, Appl. Phys. Lett. 67, 1541 (1995).
10. B. HEYING, E.J. TARSA, C.R. ELSASS, P. FINI, S.P. DENBAARS, and J.S. SPECK, J. Appl. Phys. 85, 6470 (1999).