P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 453-457

  Usikov, A ^a   Kovalenkov, O ^a   Ivantsov, V ^a   Sukhoveev, V ^a   Dmitriev, V ^a   Shmidt, N ^b   Poloskin, D ^b   Petrov, V ^b   Ratnikov, V ^b  

^a Technologies and Devices International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH KINETICS; HOLE MOBILITY; HYDRIDES; IMPURITIES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; VAPOR PHASE EPITAXY;

GROWTH RATES; HOLE CONCENTRATION; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SAPPHIRE SUBSTRATES;

HETEROJUNCTIONS;

EID: 23844482793     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A.P. Zhang et al., Appl. Phys. Lett. 79, 1555 (2001).
2. J.R. LaRoche et al., Solid State Electron 48, 193 (2003).
3. M. Kuramoto et al., Jpn. J. Appl. Phys. Vol. 40, L925 (2001).
4. A.E. Nikolaev, Yu.V. Melnik, N.I. Kuznetsov, A.M. Strelchuk, A.P. Kovarsky, K.V. Vassilevski, V.A. Dmitriev, Mater. Res. Soc. Symp. Proc. 482 (1998) 251.
5. A.S. Usikov, D.V. Tsvetkov, M.A. Mastro, A.I. Pechnkov, V.A. Soukhoveev, Y.V. Shapovalova, O.V. Kovalenkov, G.H. Gainer, S. Yu. Karpov, V.A. Dmitriev, B.O'Meara, S.A. Gurevich, E.M. Arakcheeva, A.L. Zakhgeim, and H. Helava, Phys. Stat. Sol. C, N7 (2003) 2265-2269.
6. S.Nakamura, T. Mukai, M. Senoh, N. Iwasa, Jpn. J. Appl. Phys., 31 L139 (1992).
7. D.C. Look, R.J. Molnar, Appl. Phys. Lett. 70, 3377 (1997).
8. O. Ambaher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 85, 3222 (1998).