Low leakage Schottky rectifiers fabricated on homoepitaxial GaN

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Lu, Hai ^a   Zhang, Rong ^a   Xiu, Xiangqian ^a   Xie, Zili ^a   Zheng, Youdou ^a   Li, Zhonghui ^b  

^a NANJING UNIVERSITY   (China)

^b National Key Laboratory of Monolithic Integrated Circuits and Modules   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL LAYERS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

DISLOCATION DENSITY; SCHOTTKY DIODE STRUCTURES; SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 35548973407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2795083     Document Type: Article

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