GaInN/GaN growth optimization for high-power green light-emitting diodes

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 866-868

  Wetzel, C ^a,b   Salagaj, T ^a   Detchprohm, T ^a   Li, P ^a   Nelson, J S ^a  

^a Uniroyal   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY (AFM); PHOTOLUMINESCENCE (PL); QUANTUM WELLS (QW); STARK EFFECT;

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CRYSTAL GROWTH FROM MELT; ELECTRIC FIELDS; LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTIMIZATION; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 4344713049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1779960     Document Type: Article

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