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Volumn 46, Issue 36-40, 2007, Pages

High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate

Author keywords

Blue LED; GaN bulk substrate; M plane; MQW barrier thickness; Nonpolar

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; THICK FILMS;

EID: 36048999399     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L960     Document Type: Article
Times cited : (99)

References (18)
  • 15
    • 35649000194 scopus 로고    scopus 로고
    • K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars: Phys. Status Solidi: Rapid Res. Lett. 1 (2007) 125.
    • K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars: Phys. Status Solidi: Rapid Res. Lett. 1 (2007) 125.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.