9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 596-598

  Chu, K K ^a   Chao, P C ^a   Pizzella, M T ^a   Actis, R ^a   Meharry, D E ^a   Nichols, K B ^a   Vaudo, R P ^b   Xu, X ^b   Flynn, J S ^b   Dion, J ^b   Brandes, G R ^b  

^a BAE SYSTEMS   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

FREE STANDING GALLIUM NITRIDE SUBSTRATES; GATE LEAKAGE; HIGH POWER MICROWAVE DEVICES; POWER ADDED EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4444321699     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.833847     Document Type: Article

References (13)

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