Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3946-3949

  Kawamura, Fumio ^a   Morishita, Masanori ^a   Tanpo, Masaki ^a   Imade, Mamoru ^a   Yoshimura, Masashi ^a   Kitaoka, Yasuo ^a   Mori, Yusuke ^a   Sasaki, Takatomo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A2. Single crystal; A3. Liquid phase epitaxy (LPE); B1. Carbon; B1. Nitrides; B2. GaN

Indexed keywords

CARBON; CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; FOOD ADDITIVES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIQUID PHASE EPITAXY; POLYCRYSTALS; POWDERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SODIUM;

A-CARBON; A2. SINGLE CRYSTAL; A3. LIQUID PHASE EPITAXY (LPE); B1. CARBON; B1. NITRIDES; B2. GAN; GAN SINGLE CRYSTALS; LIQUID PHASE EPITAXY (LPE); NA FLUX METHOD; NON-POLAR;

SINGLE CRYSTALS;

EID: 49449110184     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.008     Document Type: Article

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