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Volumn 5, Issue SUPPL. 1, 2000, Pages

Hydride vapour phase homoepitaxlal growth of GaN on MOCVD-grown 'templates'

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SAPPHIRE; THICKNESS MEASUREMENT;

DEFECT STRUCTURES; EDGE DISLOCATIONS; HYDRIDES VAPOR PHASE HOMOEPITAXIAL GROWTH (HVPE); UNDOPED LAYERS;

GALLIUM NITRIDE;

EID: 3242776967 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (15)

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