GaN boule growth: A pathway to GaN wafers with improved material quality

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 494-497

  Vaudo, R P ^a   Xu, X ^a   Loria, C ^a   Salant, A D ^a   Flynn, J S ^a   Brandes, G R ^a  

^a ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; HYDRIDES; LAPPING; SYNCHROTRONS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

DEFECT DENSITY; HOT PHOSPHORIC ACID ETCHING; HYDRIDE VAPOR PHASE EPITAXIAL GROWTH; MATERIAL QUALITY; X RAY TOPOGRAPHY;

GALLIUM NITRIDE;

EID: 0036962310     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396x(200212)194:2<494::aid-pssa494>3.0.co;2-%23     Document Type: Article

References (12)

1. J. Karpinski, J. Jum, and S. Porowski, J. Cryst. Growth 66, 1 (1984).
2. S. Porowski and I. Grzegory, J. Cryst. Growth 178, 174 (1997).
3. M. Aoki, H. Yamane, M. Shimada, T. Sekiguchi, T. Hanada, T. Yao, S. Sarayama, and F. J. DiSalvo, J. Cryst. Growth 218, 7 (2000).
4. K. R. Ketchum and J. W. Kolis, J. Cryst. Growth 222, 431 (2001).
5. C. M. Balkas, Z. Sitar, and T. Sheleva, Mater. Res. Soc. Proc. 449, 41 (1997).
6. M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Gorgens, O. Ambacher, and M. Stutzmann, Jpn. J. Appl. Phys. 38, L217 (1999).
7. S. S. Park, I. W. Park, and S. H. Choh, Jpn. J. Appl. Phys. 39, L1141 (2000).
8. Y. Melnik, A. Nikolaev, I. Nikitina, K. Vassilevski, and V. Dmitriev, Mater. Res. Soc. Symp. Proc. 482, 269 (1998).
9. E. V. Etzkorn and D. R. Clarke, J. Appl. Phys. 89, 1025 (2000).
10. R. P. Vaudo, G. R. Brandes, J. S. Flynn, X. Xu, M. F. Chriss, C. S. Christos, D. M. Keogh, and F. D. Tamweber, Proc. Int. Workshop Nitride Semicond., IPAP-Conf. Series 1, 15 (2000).
11. X. Xu, R. P. Vaudo, and G. R. Brandes, Opt. Mater. (2002) in press.
12. X. Xu, R. P. Vaudo, J. S. Flynn, and G. R. Brandes, J. Electron. Mater. 31, 402 (2002).