Demonstration of nonpolar m-plane InGaN/GaN laser diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Schmidt, Mathew C ^a   Kim, Kwang Choong ^a   Farrell, Robert M ^a   Feezell, Daniel F ^a   Cohen, Daniel A ^a   Saito, Makoto ^a   Fujito, Kenji ^b   Speck, James S ^a   DenBaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

GaN; Laser diode; m plane; Nonpolar

Indexed keywords

GALLIUM NITRIDE; LINEWIDTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STIMULATED EMISSION; THRESHOLD CURRENT DENSITY;

C-PLANE DEVICE GROWTH; DUTY CYCLES;

SEMICONDUCTOR LASERS;

EID: 34250658256     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L190     Document Type: Article

References (9)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74.
2. F. Bernardini, V. Fiorentini, and D. Vanderbilt: Phys. Rev. B 56 (1997) R10024.
3. P. Walterweit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog: Nature 406 (2000) 865.
4. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi: Appl. Phys. Lett. 71 (1997) 1996.
5. B. Imer, F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars: Jpn. J. Appl. Phys. 45 (2006) 8644.
6. B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura: Appl. Phys. Lett. 86 (2005) 111917.
7. B. A. Haskell, A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura: J. Electron. Mater. 34 (2005) 357.
8. J. S. Speck and S. J. Rosner: Physica B 273 (1999) 24.
9. M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck: Jpn. J. Appl. Phys. 46 (2007) L126.