N-type doping of HVPE-grown GaN using dichlorosilane

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1658-1662

  Richter, E ^a   Hennig, Ch ^a   Zeimer, U ^a   Wang, L ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DICHLOROSILANE; HYDRIDE VAPOUR PHASE EPITAXY (HVPE); N-TYPE DOPING;

ELECTRON MOBILITY; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SILANES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33745040305     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565420     Document Type: Article

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