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Volumn 57, Issue C, 1999, Pages 1-31

Chapter 1 Hydride Vapor Phase Epitaxial Growth of III-V Nitrides

Author keywords

[No Author keywords available]

Indexed keywords

III-V NITRIDES;

EID: 77956659273     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62614-9     Document Type: Chapter
Times cited : (19)

References (60)
  • 2
    • 77956654940 scopus 로고
    • Growth and properties of single crystalline GaN films by hydride vapor phase epitaxy
    • Akasaki I., Naniwae K., Itoh K., Amano H., and Hiramatsu K. Growth and properties of single crystalline GaN films by hydride vapor phase epitaxy. Cryst. Proper. Prep. 32-34 (1991) 154-157
    • (1991) Cryst. Proper. Prep. , vol.32-34 , pp. 154-157
    • Akasaki, I.1    Naniwae, K.2    Itoh, K.3    Amano, H.4    Hiramatsu, K.5
  • 3
    • 84883188181 scopus 로고
    • P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
    • Amano H., Kito M., Hiramatsu K., and Akasaki I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phys. 28 (1989) L2112-L2114
    • (1989) Jpn. J. Appl. Phys. , vol.28
    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 4
    • 77951217554 scopus 로고
    • Mass spectrometry studies of vapor-phase crystal growth: II. GaN
    • Ban V.S. Mass spectrometry studies of vapor-phase crystal growth: II. GaN. J. Electrochem. Soc 119 (1972) 761
    • (1972) J. Electrochem. Soc , vol.119 , pp. 761
    • Ban, V.S.1
  • 6
    • 0043005163 scopus 로고
    • The chemical preparation of gallium nitride iayers at low temperatures
    • Born P.J., and Robertson D.S. The chemical preparation of gallium nitride iayers at low temperatures. J. Mater. Set 15 (1980) 3003-3009
    • (1980) J. Mater. Set , vol.15 , pp. 3003-3009
    • Born, P.J.1    Robertson, D.S.2
  • 7
    • 0018032285 scopus 로고
    • Properties of GaN grown on sapphire substrates
    • Crouch R.K., Debnam W.J., and Fripp A.L. Properties of GaN grown on sapphire substrates. J. Mater. Sci. 13 (1978) 2358-2364
    • (1978) J. Mater. Sci. , vol.13 , pp. 2358-2364
    • Crouch, R.K.1    Debnam, W.J.2    Fripp, A.L.3
  • 8
    • 0001579414 scopus 로고
    • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
    • Detchprohm T., Hiramatsu K., Amano H., and Akasaki I. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer. Appl. Phys. Lett. 61 (1992) 2688-2690
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 2688-2690
    • Detchprohm, T.1    Hiramatsu, K.2    Amano, H.3    Akasaki, I.4
  • 9
    • 0027557974 scopus 로고
    • The growth of thick GaN film on sapphire substrate by using ZnO buffer layer
    • Detchprohm T., Amano H., Hiramatsu K., and Akasaki I. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. J. Cryst. Growth 128 (1993) 384-390
    • (1993) J. Cryst. Growth , vol.128 , pp. 384-390
    • Detchprohm, T.1    Amano, H.2    Hiramatsu, K.3    Akasaki, I.4
  • 10
    • 0028760421 scopus 로고
    • The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
    • Detchprohm T., Hiramatsu K., Sawaki N., and Akasaki I. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates. J. Cryst. Growth 137 (1994) 170-174
    • (1994) J. Cryst. Growth , vol.137 , pp. 170-174
    • Detchprohm, T.1    Hiramatsu, K.2    Sawaki, N.3    Akasaki, I.4
  • 11
    • 0014887197 scopus 로고
    • Vapor deposition of semiconducting mononitrides of scandium, yttrium, and the rare-earth elements
    • Dismukes J.P., Yim W.M., Tietjen X.X., and Novak R.E. Vapor deposition of semiconducting mononitrides of scandium, yttrium, and the rare-earth elements. RCA Rev. 31 (1970) 680-691
    • (1970) RCA Rev. , vol.31 , pp. 680-691
    • Dismukes, J.P.1    Yim, W.M.2    Tietjen, X.X.3    Novak, R.E.4
  • 12
    • 0000559078 scopus 로고
    • Epitaxial growth and properties of semiconducting ScN
    • Dismukes J.P., Yim W.M., and Ban V.S. Epitaxial growth and properties of semiconducting ScN. J. Cryst. Growth 13/14 (1972) 365-370
    • (1972) J. Cryst. Growth , vol.13-14 , pp. 365-370
    • Dismukes, J.P.1    Yim, W.M.2    Ban, V.S.3
  • 14
    • 0010436436 scopus 로고
    • Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer
    • Huang K.H., Yu J.G., Kuo C.P., Fletcher R.M., Osentowski T.D., Stinson L.J., and Craford M.G. Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer. Appl. Phys. Lett. 61 (1992) 1045-1047
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1045-1047
    • Huang, K.H.1    Yu, J.G.2    Kuo, C.P.3    Fletcher, R.M.4    Osentowski, T.D.5    Stinson, L.J.6    Craford, M.G.7
  • 15
    • 49649143498 scopus 로고
    • Vapor epitaxy of gallium nitride
    • Ilegems M.J. Vapor epitaxy of gallium nitride. J. Cryst. Growth 13/14 (1972) 360-364
    • (1972) J. Cryst. Growth , vol.13-14 , pp. 360-364
    • Ilegems, M.J.1
  • 16
    • 0000395858 scopus 로고
    • Effect of growth parameters on the properties of GaN: Zn epilayers
    • Jacob G., Boulou M., and Furtado M. Effect of growth parameters on the properties of GaN: Zn epilayers. J. Cryst. Growth 42 (1977) 136-143
    • (1977) J. Cryst. Growth , vol.42 , pp. 136-143
    • Jacob, G.1    Boulou, M.2    Furtado, M.3
  • 17
    • 3643069540 scopus 로고
    • Efficient injection mechanism for electroluminescence in GaN
    • Jacob G., and Bois D. Efficient injection mechanism for electroluminescence in GaN. Appl. Phys. Lett. 30 (1977) 412-414
    • (1977) Appl. Phys. Lett. , vol.30 , pp. 412-414
    • Jacob, G.1    Bois, D.2
  • 18
    • 0018011256 scopus 로고
    • GaN electroluminescent devices: preparation and studies
    • Jacob G., Boulou M., and Bois D. GaN electroluminescent devices: preparation and studies. J. Lumin. 17 (1978) 263-282
    • (1978) J. Lumin. , vol.17 , pp. 263-282
    • Jacob, G.1    Boulou, M.2    Bois, D.3
  • 20
    • 36449006910 scopus 로고
    • Temperature activated conductance in GaN/AlGaN hetero-junction field effect transistors operating at temperatures up to 300|dGC
    • Khan M.A., Shur M.S., Kuznia J.N., Chen Q., Burm J., and Schaff W. Temperature activated conductance in GaN/AlGaN hetero-junction field effect transistors operating at temperatures up to 300|dGC. Appl. Phys. Lett. 66 (1995) 1083-1085
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 1083-1085
    • Khan, M.A.1    Shur, M.S.2    Kuznia, J.N.3    Chen, Q.4    Burm, J.5    Schaff, W.6
  • 22
    • 0029637531 scopus 로고
    • High dislocation densities in high efficiency GaN-based light-emitting diodes
    • Lester S.D., Ponce F.A., Craford M.A., and Steigerald D.A. High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66 (1995) 1249-1251
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 1249-1251
    • Lester, S.D.1    Ponce, F.A.2    Craford, M.A.3    Steigerald, D.A.4
  • 24
    • 0017994694 scopus 로고
    • Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride
    • Liu S.S., and Stevenson D.A. Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride. J. Electrochem. Soc. 125 (1978) 1161-1169
    • (1978) J. Electrochem. Soc. , vol.125 , pp. 1161-1169
    • Liu, S.S.1    Stevenson, D.A.2
  • 25
    • 0014595810 scopus 로고
    • The preparation and properties of vapor-deposited single-crystalline GaN
    • Maruska H.P., and Tietjen J.J. The preparation and properties of vapor-deposited single-crystalline GaN. Appl. Phys. Lett. 15 (1969) 327-329
    • (1969) Appl. Phys. Lett. , vol.15 , pp. 327-329
    • Maruska, H.P.1    Tietjen, J.J.2
  • 26
    • 0042003441 scopus 로고
    • Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence
    • Maruska H.P., Rhines W.C., and Stevenson D.A. Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence. Mater. Res. Bull. 7 (1972) 777-782
    • (1972) Mater. Res. Bull. , vol.7 , pp. 777-782
    • Maruska, H.P.1    Rhines, W.C.2    Stevenson, D.A.3
  • 29
    • 21544468418 scopus 로고
    • Electron transport mechanism in gallium nitride
    • Molnar R.J., Lei T., and Moustakas T.D. Electron transport mechanism in gallium nitride. Appl. Phys. Lett. 62 (1993) 72-74
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 72-74
    • Molnar, R.J.1    Lei, T.2    Moustakas, T.D.3
  • 33
  • 35
    • 0026244249 scopus 로고
    • GaN growth using GaN buffer layer
    • Nakamura S. GaN growth using GaN buffer layer. Jpn. J. Appl. Phys. 30 (1991) L1705-L1707
    • (1991) Jpn. J. Appl. Phys. , vol.30
    • Nakamura, S.1
  • 38
    • 0016117444 scopus 로고
    • Preparation of epitaxial gallium nitride
    • Nickl J.J., Just W., and Bertinger R. Preparation of epitaxial gallium nitride. Mater. Res. Bull. 9 (1974) 1413-1420
    • (1974) Mater. Res. Bull. , vol.9 , pp. 1413-1420
    • Nickl, J.J.1    Just, W.2    Bertinger, R.3
  • 40
    • 0000556796 scopus 로고
    • Fabrication and properties of a practical blue-emitting GaN m-i-s diode
    • Ohki Y., Toyoda Y., Kobayasi H., and Akasaki I. Fabrication and properties of a practical blue-emitting GaN m-i-s diode. Inst. Phys. Conf. Ser. 63 (1982) 479-484
    • (1982) Inst. Phys. Conf. Ser. , vol.63 , pp. 479-484
    • Ohki, Y.1    Toyoda, Y.2    Kobayasi, H.3    Akasaki, I.4
  • 42
    • 0015636711 scopus 로고
    • Blue-green numeric display using electroluminescent GaN
    • Pankove J.I. Blue-green numeric display using electroluminescent GaN. RCA Rev. 34 (1973) 336-343
    • (1973) RCA Rev. , vol.34 , pp. 336-343
    • Pankove, J.I.1
  • 43
    • 0017291752 scopus 로고
    • Photoluminescence of ion-implanted GaN
    • Pankove J.I., and Hutchby J.A. Photoluminescence of ion-implanted GaN. J. Appl. Phys. 47 (1976) 5387-5390
    • (1976) J. Appl. Phys. , vol.47 , pp. 5387-5390
    • Pankove, J.I.1    Hutchby, J.A.2
  • 44
    • 0029766284 scopus 로고    scopus 로고
    • Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates
    • Perkins N.R., Horton M.N., and Kuech T.F. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates. Mater. Res. Soc. Symp. Proc 395 (1996) 243-248
    • (1996) Mater. Res. Soc. Symp. Proc , vol.395 , pp. 243-248
    • Perkins, N.R.1    Horton, M.N.2    Kuech, T.F.3
  • 47
    • 0000290588 scopus 로고    scopus 로고
    • Structure of GaN films grown by hydride vapor phase epitaxy
    • Romano L.T., Krusor B.S., and Molnar R.J. Structure of GaN films grown by hydride vapor phase epitaxy. Appl. Phys. Lett. 71 (1997) 2283-2285
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2283-2285
    • Romano, L.T.1    Krusor, B.S.2    Molnar, R.J.3
  • 49
    • 0001212254 scopus 로고
    • Epitaxial growth of undoped and Mg-doped GaN
    • Sano M., and Aoki M. Epitaxial growth of undoped and Mg-doped GaN. Jpn. J. Appl. Phys. 15 (1976) 1943-1950
    • (1976) Jpn. J. Appl. Phys. , vol.15 , pp. 1943-1950
    • Sano, M.1    Aoki, M.2
  • 50
    • 0021589683 scopus 로고
    • Cathodoluminescent contrast of direct writing patterns in the scanning electron microscope
    • Saparin G.V., Obyden S.K., Chukichev M.V., and Popov S.I. Cathodoluminescent contrast of direct writing patterns in the scanning electron microscope. J. Lumin. 31 & 32 (1984) 684-686
    • (1984) J. Lumin. , vol.31-32 , pp. 684-686
    • Saparin, G.V.1    Obyden, S.K.2    Chukichev, M.V.3    Popov, S.I.4
  • 51
    • 3242743994 scopus 로고
    • Study on the growth rate in VPE of GaN
    • Seifert W., Fitzl G., and Butter E. Study on the growth rate in VPE of GaN. J. Cryst. Growth 52 (1981) 257-262
    • (1981) J. Cryst. Growth , vol.52 , pp. 257-262
    • Seifert, W.1    Fitzl, G.2    Butter, E.3
  • 54
    • 0028421930 scopus 로고
    • Horaoepitaxial growth of cubic GaN by hydride vapor phase epitaxy on cubic GaN/GaAs substrates prepared with gas source molecular beam epitaxy
    • Tsuchiya H., Okahisa T., Hasegawa F., Okumura H., and Yoshida S. Horaoepitaxial growth of cubic GaN by hydride vapor phase epitaxy on cubic GaN/GaAs substrates prepared with gas source molecular beam epitaxy. Jpn. J. Appl Phys. 33 (1994) 1747-1752
    • (1994) Jpn. J. Appl Phys. , vol.33 , pp. 1747-1752
    • Tsuchiya, H.1    Okahisa, T.2    Hasegawa, F.3    Okumura, H.4    Yoshida, S.5
  • 57
    • 0031187047 scopus 로고    scopus 로고
    • Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy
    • Usui A., Sunakawa H., Sakai A., and Yamaguchi A.A. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy. Jpn. J. Appl. Phys. 36 (1997) L899-L902
    • (1997) Jpn. J. Appl. Phys. , vol.36
    • Usui, A.1    Sunakawa, H.2    Sakai, A.3    Yamaguchi, A.A.4
  • 58
    • 0001621029 scopus 로고
    • Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates
    • Wickenden D.K., Faulkner K.R., Brander R.W., and Isherwood B.J. Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates. J. Cryst. Growth 9 (1971) 158-164
    • (1971) J. Cryst. Growth , vol.9 , pp. 158-164
    • Wickenden, D.K.1    Faulkner, K.R.2    Brander, R.W.3    Isherwood, B.J.4
  • 59
    • 0030190099 scopus 로고    scopus 로고
    • Single domain hexagonal GaN films on GaAs (100) vicinal substrates grown by hydride vapor phase epitaxy
    • Yamaguchi A., Manak T., Sakai A., Sunakawa H., Kimura A., Nido M., and Usui A. Single domain hexagonal GaN films on GaAs (100) vicinal substrates grown by hydride vapor phase epitaxy. Jpn. J. Appl. Phys. 35 (1996) L873-L875
    • (1996) Jpn. J. Appl. Phys. , vol.35
    • Yamaguchi, A.1    Manak, T.2    Sakai, A.3    Sunakawa, H.4    Kimura, A.5    Nido, M.6    Usui, A.7


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