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Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3934-3940

Seeded growth of GaN single crystals from solution at near atmospheric pressure

(7) Feigelson, B N a,b Frazier, R M b,d Gowda, M b,c Freitas Jr , J A b Fatemi, M b Mastro, M A b Tischler, J G b

a SCIENCE APPLICATIONS INTERNATIONAL CORPORATION (United States)

b NAVAL RESEARCH LABORATORY (United States)

c GEORGE MASON UNIVERSITY (United States)

d UNIVERSITY OF ALABAMA (United States)

Author keywords

A2. Growth from high temperature solutions; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AGRICULTURAL PRODUCTS; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CRYSTALLOGRAPHY; CRYSTALS; DISSOLUTION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; NITROGEN; NONMETALS; OPTICAL MICROSCOPY; POWDERS; SEED; SEMICONDUCTING GALLIUM; THERMOANALYSIS;

A2. GROWTH FROM HIGH TEMPERATURE SOLUTIONS; A2. SINGLE CRYSTAL GROWTH; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; GALLIUM NITRIDE (GAN); GAN CRYSTALS; MICRO-RAMAN SCATTERING; MULTI COMPONENTS; NITROGEN PRESSURES; OPTICAL QUALITIES; OPTICAL-; SEEDED GROWTH; SOURCE MATERIALS; X-RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 49449086531 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.06.037 Document Type: Article

Times cited : (19)

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