메뉴 건너뛰기




Volumn 300, Issue 1, 2007, Pages 17-25

Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods

Author keywords

A2. High pressure growth from solution; A2. Single crystal growth; B1. Gallium nitride

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; HIGH PRESSURE EFFECTS; X RAY ANALYSIS;

EID: 33847329324     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.235     Document Type: Article
Times cited : (26)

References (20)
  • 8
    • 0033221327 scopus 로고    scopus 로고
    • S.H. Christiansen, M. Albrecht, H.P. Strunk, C.T. Foxon, D. Korakakis, I. Grzegory, S. Porowski, in: Proceedings of the ICNS'99, Montpellier, France, in Physica Status Solidi (a), 176, n1 (1999), 285.
  • 12
    • 33646726339 scopus 로고    scopus 로고
    • P. Wisniewski, R. Czernecki, P. Prystawko, M. Maszkowicz, M. Leszczyński, T. Suski, I. Grzegory, S. Porowski, M. Marona, T. Świetlik and P. Perlin, in: Proceedings of SPIE 6133, 61330Q, 2006.
  • 17
    • 33847291990 scopus 로고    scopus 로고
    • J.L. Weyher, R. Lewandowska, L. Macht, B. Łucznik, I. Grzegory, in: Proceedings of DRIP XI, Beijing, September 2005.
  • 18
    • 33847320274 scopus 로고    scopus 로고
    • I. Grzegory, B. Łucznik, M. Boćkowski, B. Pastuszka, M. Kryśko, G. Kamler, G. Nowak, S. Porowski, in: Proceedings of SPIE 6121, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.