Gallium nitride materials - Progress, status, and potential roadblocks

Proceedings of the IEEE

Volumn 90, Issue 6, 2002, Pages 993-1004

  Davis, Robert F ^a,f,g,h,i   Roskowski, Amy M ^b   Preble, Edward A ^a   Speck, James S ^c   Heying, Ben ^d   Freitas Jr , Jaime A ^e   Glaser, Evan R ^e,j   Carlos, William E ^e,j,k  

^a North Carolina State University   (United States)

^b INTEL CORPORATION   (United States)

^c University of California   (United States)

^d NORTHROP GRUMMAN CORPORATION   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

^f KOBE STEEL LTD   (Japan)

^g NATIONAL ACADEMY OF ENGINEERING   (United States)

^h Materials Research Society   (United States)

ⁱ AMERICAN CERAMIC SOCIETY   (United States)

^j NRL   (United States)

^k Electronic Science and Technology Division   (United States)

more..

Author keywords

Aluminum gallium nitride (AlGaN); Defects; Dislocations; Dopants; Electron irradiation; Electron mobilities; Excitons; Fourier transform infrared (FTIR) absorption; Gallium nitride (GaN); Heteroepitaxy; Hydride vapor phase epitaxy (HVPE)

Indexed keywords

ELECTRON MOBILITY; EXCITONS; MAGNETIC RESONANCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDE (ALGAN); DOPANTS; FOURIER TRANSFORM INFRARED (FTIR) ABSORPTION; HETEROEPITAXY; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 0038421886     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021564     Document Type: Review

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