Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 340-345

  Storm, D F ^a   Katzer, D S ^a   Roussos, J A ^a   Mittereder, J A ^a   Bass, R ^a   Binari, S C ^a   Zhou, Lin ^b   Smith, David J ^b   Hanser, D ^c   Preble, E A ^c   Evans, K R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

A3. Hydride vapor phase epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B3. High electron mobility transistors

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HALL MEASUREMENTS; HYDRIDE VAPOR PHASE EPITAXY; STRUCTURAL CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34347329140     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.003     Document Type: Article

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