Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 PART 2, 1999, Pages 356-359

  Sone, Hiroki ^a   Nambu, Shingo ^a   Kawaguchi, Yasutoshi ^a   Yamaguchi, Masahito ^a   Miyake, Hideto ^b   Hiramatsu, Kazumasa ^b   Iyechika, Yasushi ^c   Maeda, Takayoshi ^c   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

Cathodoluminescence (CL) image; Epitaxial lateral overgrowth (ELO); GaN; Hydride vapor phase epitaxy (HVPE); Tungsten (W) mask; X ray rocking curve (XRC)

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; FILM GROWTH; IMAGING TECHNIQUES; MASKS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TUNGSTEN; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

EPITAXIAL LATERAL OVERGROWTH (ELO); GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); X RAY ROCKING CURVES (XRC);

SEMICONDUCTING FILMS;

EID: 0032623577     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l356     Document Type: Article

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