Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 29-32, 2007, Pages

  Farrell, Robert M ^a,b   Feezell, Daniel F ^a,b   Schmidt, Mathew C ^a,b   Haeger, Daniel A ^a   Kelchner, Kathryn M ^a,b   Iso, Kenji ^a,b   Yamada, Hisashi ^a,b   Saito, Makoto ^a,b   Fujito, Kenji ^c   Cohen, Daniel A ^a,b   Speck, James S ^a,b   Denbaars, Steven P ^a,b   Nakamura, Shuji ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

Continuous wave; Free standing GaN substrate; InGaN; Laser diode; M plane; Nonpolar

Indexed keywords

CLADDING (COATING); GALLIUM NITRIDE; INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD CURRENT DENSITY;

CLADDING LAYERS; FREE-STANDING GAN SUBSTRATE; NONPOLAR; OPTICAL MODE CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 34548426581     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L761     Document Type: Article

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