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Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 101-106

Optoelectronic devices on bulk GaN

(7) Figge, S a Bottcher T a Dennemarck, J a Kroger R a Paskova, T b Monemar, B b Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

A3. Hydride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CURRENT DENSITY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; OPTIMIZATION; OPTOELECTRONIC DEVICES; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

DEFECT DENSITIES; HYDRIDE VAPOR PHASE EPITAXY; LASER STRUCTURES; OVERGROWTH;

GALLIUM NITRIDE;

EID: 20744445237 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.017 Document Type: Conference Paper

Times cited : (8)

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